SW417J Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – P-channel Enhanced mode SOT-23 MOSFET

SW417J
P-channel Enhanced mode SOT-23 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 54mΩ)@V_GS=-10V
Low R_DS(ON) (Typ 77mΩ)@V_GS=-4.5V
 Low Gate Charge (Typ 10nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: DC-DC Converter,
Motor Control
SOT-23
2
1
3
1. Gate 2. Drain 3. Source
BV_DSS : -30V
I_D
: -4A
R_DS(ON) : 54mΩ @V_GS=-10V
77mΩ @V_GS=-4.5V
D
General Description
G
This power MOSFET is produced with advanced technology of SAMWIN.
S
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW R 417J
SW417J
SOT-23
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Peak diode recovery dv/dt
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
-30
-4*
-2.5*
-16
± 20
5
1.2
0.01
-55 ~ + 150
300
Unit
V
A
A
A
V
V/ns
W
W/^oC
o_C
o_C
Symbol
Parameter
R_thja Thermal resistance, Junction to ambient（note）
Value
105.1
Unit
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design. 105.1^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jul. 2015. Rev. 1.0
1/6