SW40N06V Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode DFN5*6 MOSFET

SW40N06V
N-channel Enhanced mode DFN5*6 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 8.4mΩ)@V_GS=10V
(Typ 9.5mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 83nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Electronic Ballast, Motor Control
DFN5*6
BV_DSS : 60V
I_D
: 40A
R_DS(ON) : 8.4mΩ@V_GS=10V
9.5mΩ@V_GS=4.5V
2
Synchronous Rectification, Inverter
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW HA 40N06V
SW40N06V
DFN5*6
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
Value
60
40*
25*
160
± 20
160
13
5
1.49
0.01
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thja Thermal resistance, Junction to ambient
Value
84
Unit
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 2.0 1/6