SW3N80 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET

SAMWIN
SW3N80
N-channel MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 4.5 Ω)@V_GS=10V
■ Gate Charge (Typ 26nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220F
TO-220
12 ₃
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BV_DSS : 800V
I_D
: 3.0A
R_DS(ON) : 4.5ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW P 3N80
SW F 3N80
Absolute maximum ratings
Marking
SW3N80
SW3N80
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J
T_L
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Value
TO-220
TO-220F
800
3.0
3.0*
1.9
1.9*
12
± 30
310
10
4.5
106
39*
0.8
0.31
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-220
TO-220F
1.18
3.18
0.5
62.5
Unit
o_C/W
o_C/W
o_C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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