SW3N10 Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel D-PAK MOSFET

SAMWIN
SW3N10
N-channel D-PAK MOSFET
Features
TO-252
■ High ruggedness
■ R_DS(ON) (Max 107mΩ)@V_GS=10V
■ Gate Charge (Typical 21nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
2
1
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BV_DSS : 100V
I_D
: 3A
R_DS(ON) : 107mΩ
2
1
3
Order Codes
Item
1
Sales Type
SW D 3N10
Marking
SW3N10
Package
TO-252
Packaging
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J
T_L
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thja*
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient (PCB Mount)
Thermal resistance, Junction to ambient
*. The value varied due to mounted PCB pad areas
Value
100
3*
1.9*
12
± 16
187
40
5
44
0.35
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
2.84
80.2
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
1/5