SW35N10V Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode DFN5*6 MOSFET

SW35N10V
N-channel Enhanced mode DFN5*6 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 11.6mΩ)@V_GS=10V
(Typ 12.4mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 117nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
DFN5x6
BV_DSS : 100V
I_D
: 35A
R_DS(ON) : 11.6mΩ@V_GS=10V
12.4mΩ@V_GS=4.5V
2
Li Battery Protect Board, Inverter
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW HA 35N10V
SW35N10V
DFN5x6
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
Value
100
35*
22*
140
± 20
392
22
5
1.45
0.01
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thja Thermal resistance, Junction to ambient
Value
86
Unit
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0 1/6