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SW3416J Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode SOT-23 MOSFET
SW3416J
Features
N-channel Enhanced mode SOT-23 MOSFET
 High ruggedness
SOT-23
 Low RDS(ON) (Typ 18mΩ)@VGS=4.5V
(Typ 21mΩ)@VGS=2.5V
2
(Typ 25mΩ)@VGS=1.8V
 Low Gate Charge (Typ 12.5nC)
 Improved dv/dt Capability
 ESD Protection-Class 2(HBM Mode)
1
 100% Avalanche Tested
 Application:DC-DC Converter,Inverter,
Synchronous Rectification
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BVDSS : 20 V
ID
: 7A
RDS(ON) : 18mΩ@VGS=4.5V
21mΩ@VGS=2.5V
25mΩ@VGS=1.8V
2
1
ESD Protection
3
Order Codes
Item
Sales Type
1
SW R 3416J
Absolute maximum ratings
Marking
3416J
Package
SOT-23
Packaging
REEL
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
dv/dt
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 3)
Total power dissipation (@TC=25oC)
PD
Derating factor above 25oC
TSTG, TJ Operating junction temperature & storage temperature
Value
20
7*
4.4*
28
± 12
43
5
1.37
0.01
-55 ~ + 150
Unit
V
A
A
A
V
mJ
V/ns
W
W/oC
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
Unit
Rthja Thermal resistance, Junction to ambient(note)
91
oC/W
Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's
board design. 91 oC/W on a 1 in2 pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jul. 2015. Rev. 1.0
1/6