SW30N06 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET

SAMWIN
SW30N06
N-channel MOSFET
Features
TO-220
TO-251
TO-252
■ High ruggedness
■ R_DS(ON) (Max 0.036 Ω)@V_GS=10V
■ Gate Charge (Typ 20nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12 ₃
12 ₃
12
3
1. Gate 2. Drain 3. Source
General Description
These N-channel enhancement mode power field effect transistors are produced using
SAMWIN’s proprietary, planar stripe, DMOS technology.
This advanced technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers
BV_DSS : 60V
I_D
: 30A
R_DS(ON) : 0.036 ohm
2
1
3
Order Codes
Item
1
2
3
Sales Type
SW P 30N06
SW I 30N06
SW D 30N06
Marking
SW30N06
SW30N06
SW30N06
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-220
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Value
60
30
14
120
± 20
178
4.0
7.0
44
0.57
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
Unit
Min.
Typ.
Max.
2.85
o_C/W
50
o_C/W
110
o_C/W
May. 2011. Rev. 3.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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