SW2N7002 Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode SOT-23 MOSFET

SW2N7002
Features
 High Switching Speed
 Low R_DS(ON) (Typ 2.3Ω)@V_GS=5V
 Low R_DS(ON) (Typ 1.75Ω)@V_GS=10V
 Low Gate Charge (Typ 1.7nC)
 Application: Small Servo Motor Control,
Switch
N-channel Enhanced mode SOT-23 MOSFET
SOT-23
BV_DSS : 60V
I_D
: 0.3A
R_DS(ON)：1.75Ω @V_GS=10V
1. Gate 2. Source 3. Drain
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW R 2N7002
SW2N7002
SOT-23
REEL
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V_DSS Drain to source voltage
60
V
Continuous drain current (@T_C=25^oC)
I_D
Continuous drain current (@T_C=100^oC)
0.3*
A
0.19*
A
I_DM
Drain current pulsed
(note 1)
1.2
A
V_GS
Gate to source voltage
± 20
V
P_D
Total power dissipation (@T_C=25^oC)
0.35
W
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
-55 ~ + 150
o_C
Symbol
Parameter
Value
Unit
R_thja Thermal resistance, Junction to ambient(note 2)
350
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0
1/5