SW2N65K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251N/TO-252 MOSFET

SW2N65K
N-channel Enhanced mode TO-251N/TO-252 MOSFET
Features
TO-251N
TO-252
 High ruggedness
 Low R_DS(ON) (Typ 1.9Ω)@V_GS=10V
 Low Gate Charge (Typ 7.8nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Power Supply,LED Boost
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 650V
I_D
: 2A
R_DS(ON) : 1.9Ω
2
1
3
Item
Sales Type
1
SW N 2N65K
2
SW D 2N65K
Marking
SW2N65K
SW2N65K
Package
TO-251N
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
Value
TO-251N TO-252
650
2*
1.3*
8
± 30
25
3.5
5
39
41.7
0.31
0.33
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
T_STG, T_J Operating junction temperature & storage temperature
-55 ~ + 150
o_C
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
300
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-251N TO-252
3.2
3.0
87
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0
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