SWE3134J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SWE3134J
0.75A, 20V, R_DS(ON) 380 mΩ
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Lead free product is acquired
Surface mount package
N-channel switch with low R_DS(ON)
Operated at low logic level gate drive
ESD protected gate
WBFBP-03E
APPLICATIONS
Load/ power switching
Interfacing switching
Battery management for ultra small
portable electronics
Logic level shift
MARKING
34
PACKAGE INFORMATION
Package
MPQ
WBFBP-03E
10K
Leader Size
7 inch
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.95 1.05
0.55 0.65
0.27 0.37
0.45REF.
0.27 0.37
0.45REF.
0.05REF.
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
0.05REF.
0.20 0.30
0.30 0.40
0.10 0.20
0.01 0.10
0.45 0.55
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Typical Gate-Source Voltage
VGS
Continuous Drain Current ¹
ID
Pulsed Drain Current@ tp=10µs
IDM
Total Power Dissipation ²
PD
Thermal Resistance from Junction to Ambient ¹
RθJA
Lead Temperature for Soldering Purposes@
1/8” from case for 10s
TL
Junction and Storage Temperature Range
TJ, TSTG
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size
Rating
20
±12
0.75
1.8
100
1250
260
150, -55~150
Unit
V
V
A
A
mW
°C/ W
°C
°C
http://www.SeCoSGmbH.com/
28-Jan-2016 Rev. A
Any changes of specification will not be informed individually.
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