2SK2618LS Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – N- Channel MOS Silicon FET Very High-Speed Switching Applications

2SK2618LS
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
Features and Applications
• Low ON-state resistance.
• Low Qg
TENTATIVE
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD (Tc=25°C)
Tch
Tstg
unit
500
V
±30
V
5
A
20
A
30
W
150
°C
--55 to +150
°C
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=1mA , VGS=0
VDS=500V , VGS=0
VGS=±30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=3A
ID=3A , VGS=15V
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=5A
GS=10V
See Specified Test
Circuit
IS =5A , VGS = 0
min typ
max unit
500
V
1.0
mA
±100
nA
3.5
5.5
V
1.5
3.0
S
0.95
1.25
Ω
700
pF
250
pF
120
pF
20
nC
20
ns
20
ns
50
ns
25
ns
1.2
V
Switching Time Test Circuit
VDD=200V
PW=1µS
D.C.≤0.5%
VGS=15V
ID=3A
RL=66.7
D
VOUT
Case Outline
TO-220FI(LS)
(unit:mm)
10.0
φ 3.2
4.5
2.8
G
2SK2618LS
RGS
P.G
50Ω
S
0.9
1.2
0.7
0.75
1 23
Specifications and information herein are subject to change without notice.
2.55
2.55
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
960329TM2fXHD