2SK2347 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – High-Voltage, High-Speed Switching Applications

Ordering number : EN5424A
Features
• Low ON resistance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
N-Channel Silicon MOSFET
2SK2347
High-Voltage, High-Speed
Switching Applications
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2347]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
VDSS
VGSS
ID
IDP
PD
PW≤10µs, duty cycle≤1%
Tc=25°C
Channel Temperature
Tch
Storage temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
D-S Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current IDSS
Gate-to Source Leak Current IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance |yfs|
Static Drain-to-Source
RDS(on)
ON-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
ID=1mA, VGS=0
VDS=1000V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=10A
ID=10A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
1 : Gate
2 : Drain
3 : Source
SANYO: TO-3JML
Ratings
Unit
1000
V
±30
V
20
A
40
A
4.6
W
160
W
150
°C
–55 to +150
°C
Ratings
Unit
min typ max
1000
V
1.0 mA
±100 nA
1.5
3.5 V
5.0
10
S
0.6 0.8 Ω
3300
pF
750
pF
500
pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5424-1/4