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K4H511638 Datasheet, PDF (13/24 Pages) Samsung semiconductor – 512Mb C-die DDR SDRAM Specification
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DDR SDRAM 512Mb C-die (x4, x8, x16)
15.0 DDR SDRAM IDD spec table
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
B3(DDR333@CL=2.5)
105
135
5
30
25
30
45
140
150
205
5
3
360
128Mx4 (K4H510438C)
A2(DDR266@CL=2.0)
95
125
5
30
25
30
45
125
130
195
5
3
325
DDR SDRAM
(VDD=2.7V, T = 10°C)
B0(DDR266@CL=2.5)
95
125
5
30
25
30
45
125
130
195
5
3
325
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
64Mx8 (K4H510838C)
Unit Notes
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
120
105
95
95
mA
150
135
125
125
mA
5
5
5
5
mA
30
30
30
30
mA
25
25
25
25
mA
45
30
30
30
mA
60
45
45
45
mA
155
140
125
125
mA
175
150
130
130
mA
220
205
195
195
mA
5
5
5
5
mA
3
3
3
3
mA Optional
385
360
325
325
mA
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
32Mx16 (K4H511638C)
Unit Notes
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
120
105
95
95
mA
160
140
130
130
mA
5
5
5
5
mA
30
30
30
30
mA
25
25
25
25
mA
45
30
30
30
mA
60
45
45
45
mA
190
170
155
155
mA
215
185
160
160
mA
220
205
195
195
mA
5
5
5
5
mA
3
3
3
3
mA Optional
400
380
345
345
mA
Rev. 1.1 June. 2005
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