2SK2715_1 Datasheet, PDF (1/5 Pages) Rohm – 10V Drive Nch MOS FET

Transistors
10V Drive Nch MOS FET
2SK2715
2SK2715
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuit can be simple.
6) Parallel use is easy.
zExternal dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
(1)Gate
(2)Drain
(3)Source
0.75
0.65
0.9 2.3
(1)
(2)
(3) 2.3
0.5
1.0
Abbreviated symbol : K2715
zApplication
Switching
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
2SK2715
Taping
TL
2500
zInner circuit
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Reverse drain
current
Continuous
Pulsed
Total power dissipation (Tc=25°C)
Channel temperature
Storage temperature
∗Pw≤10µs, Duty cycle≤1%
VDSS
VGSS
ID
IDP^∗
IDR
IDRP^∗
PD
Tch
Tstg
Limits
500
±30
2
6
2
6
20
150
−55 to +150
(1) Gate
(1)
(2) Drain
(3) Source
Unit
V
V
A
A
A
A
W
°C
°C
(2)
(3)
Rev.B
1/4