SXE1089Z Datasheet, PDF (1/10 Pages) RF Micro Devices – 0.05GHz to 3GHz, CASCADABLE pHEMT MMIC AMPLIFIER

SXE1089Z
0.05GHz to
3GHz, Cascad-
able pHEMT
MMIC Ampli-
fier
SXE1089Z
0.05GHz to 3GHz, CASCADABLE pHEMT
MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing
a patented self-bias Darlington topology housed in a lowcost, surface
mountable SOT-89 package. The active bias network provides stable cur-
rent over temperature and process thereshold voltage variations.
Designed to run directly from a 5V supply, the SXE1089Z does not require
a dropping resistor as compared to typical Darlington amplifiers. The
SXE1089Z product is designed for high linearity 5V gain block applica-
tions that require small size and minimal external com-
Optimum Technology ^{ponents. It is internally matched to 50.}
Matching® Applied
GaAs HBT
GaAs MESFET
Gain and Return Loss
T = 25°C
20.0
InGaP HBT
S21
SiGe BiCMOS
Si BiCMOS
10.0
Note: Measured with Bias tees and deembedded to lead of device
SiGe HBT
 ^{GaAs pHEMT}
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
0.0
-10.0
S22
-20.0
S11
-30.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Features
 Excellent ACP -65dBc with 9.5dBm
Channel Power at 2140MHz
 OIP₃=38.5dBm at 2140MHz
 P_1dB=22.6dBm at 2140MHz
 Gain=11.7dB at 1960MHz
 NF=3.2dB at 1960MHz
 Single-Supply Operation:5V at
I_DQ = 128 mA
 Broadband Internal Matching, No
Dropping Resistor
 Patented Self-Bias Darlington
Topology
 Consistent Current versus Temper-
ature
 Insensitive to Process Threshold
Voltage Variation
Applications
 PA Driver Amplifier, Multi-Carrier
Applications
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
14.2
dB
880 MHz
11.7
dB
1960 MHz
9.6
11.1
12.6
dB
2140 MHz
Output Power at 1dB Compression
22.4
dBm
880 MHz
22.9
dBm
1960 MHz
20.7
22.2
dBm
2140 MHz
Output Third Order Intercept Point
38.0
dBm
880MHz, 5dBm per tone, 1MHz spacing,
38.5
dBm
1960MHz, 5dBm per tone, 1MHz spacing,
36.6
38.6
dBm
2140MHz, 5dBm per tone, 1MHz spacing,
IS-95 Channel Power
13.2
dBm
880MHz, -65dBc ACP, tested with 9 Channels
FWD
17.0
dBm
880MHz, -45dBc ACP
WCDMA Channel Power
9.5
dBm
2140MHz, -65dBc ACP, tested with 64 Channels
FWD
14.5
dBm
2140MHz, -45dBc ACP
Input Return Loss
16.0
20.0
dB
2140 MHz
Output Return Loss
11.7
15.7
dB
2140 MHz
Noise Figure
3.2
4.2
dB
2140 MHz
Device Operating Voltage
5.0
V
Device Operating Current
118
128
138
mA
Thermal Resistance
45.0
°C/W
junction - lead
Test Conditions: V_D=5V, I_DQ=128mA Typ. , T_L=25°C, Z_S=Z_L=50, Tested with Broadband Application Circuit
DS110610
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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