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| 2SK2736 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel DV-L MOS FET High Speed Power Switching | |||
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2SK2736
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 20 m⦠typ. (VGS = 10 V, ID = 15 A)
⢠4 V gate drive devices.
⢠High speed switching
Outline
REJ03G1030-0200
(Previous: ADE-208-544)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220Câ¢FM)
D
G
1. Gate
2. Drain
3. Source
12 3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
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