2SK2596_07 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET UHF Power Amplifier

2SK2596
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. (f = 836.5 MHz)
• Compact package capable of surface mounting
REJ03G0207-0400
Rev.4.00
Nov 08, 2007
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK ^R )
3
1
1
2
3
4
2, 4
Note: Marking is “BX”.
1. Gate
2. Source
3. Drain
4. Source
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
Pch ^Note2
Tch
Tstg
Ratings
17
±10
0.4
1
3
150
–45 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G0207-0400 Rev.4.00 Nov 08, 2007
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