2SK2596 Datasheet, PDF (1/5 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET UHF Power Amplifier

2SK2596
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz)
• Compact package capable of surface mounting
Outline
PLZZ0004CA-A
(Previous code : UPAK)
D
G
1
2
3
4
S
Note: Marking is “BX“.
REJ03G0207-0300
(Previous ADE-208-1367(Z))
Rev.3.00
Feb.14.2005
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
Pch ^Note2
Tch
Tstg
Ratings
17
±10
0.4
1
3
150
–45 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
Rev.3.00, Feb.14.2005, page 1 of 4