2SK2595 Datasheet, PDF (1/14 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET UHF Power Amplifier

2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz)
• Compact package capable of surface mounting
Outline
REJ03G0206-0400
Rev.4.00
Feb.14.2005
PLSS0003ZA-A
(Previous code : RP8P)
D
G
S
Note: Marking is "AX".
1
3
2
1. Gate
2. Source
3. Drain
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
Pch^Note2
Tch
Tstg
Ratings
17
±10
1.1
5
20
150
– 45 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
Rev.4.00, Feb.14.2005, page 1 of 13