2SK2586 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK2586
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
R_DS(on) = 7 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
REJ03G1020-0500
(Previous: ADE-208-358C)
Rev.5.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
G
2. Drain
(Flange)
3. Source
1
2
S
3
Rev.5.00 Sep 07, 2005 page 1 of 7