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| 2SK2569 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK2569
Silicon N Channel MOS FET
Application
High speed power switching
Features
⢠Low on-resistance.
⢠RDS(on) = 2.6 ⦠max. (at VGS = 4 V, ID = 100 mA)
⢠2.5 V gate drive device.
⢠Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
G
2
Note: Marking is "ZNâ"
REJ03G1018-0300
Rev.3.00
Dec 27, 2006
D
1. Source
2. Gate
3. Drain
S
Rev.3.00 Dec 27, 2006 page 1 of 6
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