2SK2553 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET
High Speed Power Switching
Application
High speed power switching
Features
• Low on-resistance
• R_DS(on) = 7 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
REJ03G1015-1000
(Previous: ADE-208-357H)
Rev.10.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(L))
(Package name: LDPAK(S)-(1))
4
4
D
1
23
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.10.00 Sep 07, 2005 page 1 of 8