2SK2329 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK2329(L), 2SK2329(S)
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source
• Suitable for Switching regulator, DC-DC converter
Outline
REJ03G1008-0200
(Previous: ADE-208-1356)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
D
G
12 ₃
1
23
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7