2SK2315 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK2315
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source.
• Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK ^R )
21
3
4
D
G
REJ03G1006-0200
(Previous: ADE-208-1354)
Rev.2.00
Sep.07,2005
1. Gate
2. Drain
3. Source
4. Drain
Note: Marking is “TY”
S
*UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep. 07, 2005 page 1 of 5