LQA60A300C Datasheet, PDF (1/8 Pages) Power Integrations, Inc. – 300 V, 60 A Q-Series Common-Cathode Diode

LQA60A300C
Qspeed^™ Family
300 V, 60 A Q-Series Common-Cathode Diode
Product Summary
I_F(AVG) per diode
30
A
V_RRM
300
V
Q_RR (Typ at 125 °C)
53
nC
I_RRM (Typ at 125 °C)
2.85
A
Softness t_b/t_a (Typ at 125 °C) 0.6
Pin Assignment
General Description
This device has the lowest Q_RR of any 300V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• AC/DC and DC/DC output rectification
•Output & freewheeling diodes
• Motor drive circuits
• DC-AC inverters
A1
K
A2
K
(Backside
Heatsink)
TO-247 AD
A1
K
A2
RoHS Compliant
Package uses Lead-free plating and Green mold
compound.Halogen free per IEC 61249-2-21.
Features
• Low Q_RR, Low I_RRM, Low t_RR
• High dI_F/dt capable (1000A/µs)
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol
V_RRM
I_F(AVG)
Parameter
Peak repetitive reverse voltage
Average forward current
I_FSM
I_FSM
T_J
T_STG
P_D
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Conditions
Per Diode, T_J = 150 °C, T_C = 99 °C
Per Device, T_J = 150 °C, T_C = 99 °C
Per Diode, 60 Hz, ½ cycle
Per Diode, ½ cycle of t = 28 µs Sinusoid,
T_C = 25 °C
Leads at 1.6mm from case, 10 sec
T_C = 25 °C
Rating
300
30
60
200
Units
V
A
A
A
350
A
150
°C
–55 to 150 °C
300
°C
113
W
Thermal Resistance
Symbol Resistance from:
R_θJA
Junction to ambient
R_θJC
Junction to case
Conditions
Per Device
Per Diode
Per Device
Rating
40 (Typ)
1.1
0.6
Units
°C/W
°C/W
°C/W
www.powerint.com
January 2011