F1222 Datasheet, PDF (2/2 Pages) Polyfet RF Devices – PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1222
POUT VS PIN GRAPH
F1222 POUT VS PIN F=400 MHZ; IDQ=0.8A;
VDS=12.5V
25
20
15
10
5
0
0
Efficiency = 65%
0.5
1
1.5
2
PIN IN WATTS
2.5
POUT
22.00
20.00
18.00
16.00
14.00
12.00
10.00
8.00
3
GAIN
IV CURVE
CAPACITANCE VS VOLTAGE
F1C 2DIE CAPACITANCE
1000
100
Coss
Ciss
10
Crss
1
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
16
14
12
10
8
6
4
2
0
0
2
Vg = 2V
F1C 2 DIE IV CURVE
4
6
Vg = 4V
8
10
12
Vds in Volts
Vg = 6V
Vg = 8V
14
16
Vg = 10V
18
20
Vg = 12V
F1C 2 DIE GM & ID vs VGS
100
Id
10
Gm
1
0.1
0
2
4
6
8
10
12
14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com