2SK2593 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
s Features
q Low noies, high gain
q High gate to drain voltage V_GDO
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1.6±0.15
unit: mm
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
V_DSX
V_GDO
V_GSO
I_D
I_G
P_D
T_j
T_stg
55
V
−55
V
−55
V
±30
mA
10
mA
125
mW
125
°C
−55 to +125
°C
0.2±0.1
1: Source
2: Drain
3: Gate
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol (Example): 2B
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
I_DSS*
I_GSS
V_GDS
V_GSC
V_DS = 10V, V_GS = 0
V_GS = −30V, V_DS = 0
I_G = −100µA, V_DS = 0
V_DS = 10V, I_D = 10µA
1
20
mA
10
nA
55
80
V
−5
V
Forward transfer admittance
| Y_fs |
V_DS = 10V, I_D = 5mA, f = 1kHz
2.5
7.5
mS
Input capacitance (Common Source) C_iss
Reverse transfer capacitance (Common Source) C_rss
V_DS = 10V, V_GS = 0, f = 1MHz
6.5
pF
1.9
pF
Noise figure
V_DS = 10V, V_GS = 0, R_g = 100kΩ
NF
2.5
dB
f = 100Hz
* _{IDSS rank classification}
Runk
P
I_DSS (mA)
Marking Symbol
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
S
10 to 20
2BS
1