2SK2573 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
2SK2573 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
500
V
Gate to Source voltage
V_GSS
±30
V
Drain current
DC
I_D
Pulse
I_DP
±20
A
±40
A
Avalanche energy capacity
EAS^*
20
mJ
Allowable power
dissipation
T_C = 25°C
P_D
Ta = 25°C
100
W
3
Channel temperature
T_ch
Storage temperature
T_stg
* _{L = 0.1mH, IL = 20A, 1 pulse}
150
°C
−55 to +150
°C
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
V_th
Drain to Source ON-resistance R_DS(on)
Forward transfer admittance
| Y_fs |
Diode forward voltage
V_DSF
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time
t_on
Fall time
t_f
Turn-off time (delay time)
t_d(off)
Thermal resistance between channel and case R_th(ch-c)
Thermal resistance between channel and atmosphere R_th(ch-a)
V_DS = 400V, V_GS = 0
V_GS = ±20V, V_DS = 0
I_D = 1mA, V_GS = 0
V_DS = 25V, I_D = 1mA
V_GS = 10V, I_D = 10A
V_DS = 25V, I_D = 10A
I_DR = 20A, V_GS = 0
V_DS = 20V, V_GS = 0, f = 1MHz
V_DD = 150V, I_D = 10A
V_GS = 10V, R_L = 15Ω
unit: mm
15.5±0.5
φ3.2±0.1
3.0±0.3
5˚
5˚
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5˚
5˚
5˚
5˚
5.45±0.3
0.7±0.1
123
1: Gate
2: Drain
3: Source
TOP-3E Package
min
typ
max
Unit
100
µA
±1
µA
500
V
1
5
V
0.32
0.4
Ω
7.2
12
S
−2.8
V
3000
pF
430
pF
175
pF
150
ns
140
ns
480
ns
1.25 °C/W
41.67 °C/W
1