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| 2SK2538 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS | |||
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Power F-MOS FETs
2SK2538
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed
q High-speed switching
q No secondary breakdown
s Applications
q High-speed switching (switching mode regulator)
q For high-frequency power amplification
s Absolute Maximum Ratings (Tc = 25ËC)
Parameter
Symbol
Rating
Unit
Drain-Source breakdown voltage
VDSS
250
V
Gate-Source voltage
VGSS
±30
V
DC
Drain current
ID
Pulse
IDP
±2
A
±4
A
Avalanche energy capability
EAS *
10
mJ
Allowable power
dissipation
TC= 25ËC
Ta= 25ËC
PD
30
W
2
Channel temperature
Tch
150
ËC
Storage temperature
Tstg
â55 to +150
ËC
* L= 5mH, IL= 2A, VDD= 30V, 1 pulse
s Electrical Characteristics (Tc = 25ËC)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Condition
VDS= 200V, VGS= 0
VGS=±30V, VDS= 0
ID=1mA, VGS= 0
VDS=10V, ID=1mA
VGS=10V, ID=1A
VDS= 25V, ID=1A
IDR= 2A, VGS= 0
VDS=10V, VGS= 0, f=1MHz
VDD= 200V, ID= 2A
VGS=10V, RL=100â¦
2SK2538
10.0±0.2
5.5±0.2
Unit : mm
4.2±0.2
2.7±0.2
ø3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
-0.1
2.54±0.25
5.08±0.5
123
1 : Gate
2 : Drain
3 : Source
TO-220 Full Pack Package (a)
Min
Typ
Max Unit
100
µA
±1
µA
250
V
1
5
V
1.2
2
â¦
0.5
1
S
â1.6
V
220
pF
60
pF
20
pF
10
ns
20
ns
45
ns
90
ns
4.17 ËC/W
62.5 ËC/W
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