2SK2380 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
s Features
q Low gate to source leakage current, I_GSS
q Small capacitance of C_iss, C_oss, C_rss
q SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Gate to Drain voltage
Gate to Source voltage
V_GDO
−40
V
V_GSO
−40
V
Drain current
I_D
±1
mA
Gate current
I_G
10
mA
Allowable power dissipation
P_D
125
mW
Channel temperature
Storage temperature
T_ch
125
°C
T_stg
−55 to +125
°C
1.6±0.15
unit: mm
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1: Source
2: Drain
3: Gate
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol (Example): EB
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current I_DSS*
Gate to Source leakage current I_GSS
Gate to Drain voltage
V_DS
Gate to Source cut-off voltage V_GSC
Forward transfer admittance
| Y_fs |
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Conditions
V_DS = 10V, V_GS = 0
V_GS = −20V, V_DS = 0
I_G = −10µA, V_DS = 0
V_DS = 10V, I_D = 1µA
V_DS = 10V, V_GS = 0, f = 1kHz
V_DS = 10V, V_GS = 0, f = 1MHz
min
typ
max
Unit
50
200
µA
− 0.5
nA
−40
V
−1.3
−3
V
0.05
mS
1
pF
0.4
pF
0.4
pF
* _{IDSS rank classification}
Runk
Q
I_DSS (mA) 50 to 100
Marking Symbol EBQ
R
70 to 130
EBR
S
100 to 200
EBS
1