2SK2340 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
900
V
Gate to Source voltage
V_GSS
±30
V
Drain current
DC
I_D
Pulse
I_DP
±5
A
±10
A
Avalanche energy capacity
EAS^*
45
mJ
Allowable power
dissipation
T_C = 25°C
P_D
Ta = 25°C
50
W
2
Channel temperature
T_ch
Storage temperature
T_stg
* _{L = 3.6mH, IL = 5A, 1 pulse}
150
°C
−55 to +150
°C
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
V_th
Drain to Source ON-resistance R_DS(on)
Forward transfer admittance
| Y_fs |
Diode forward voltage
V_DSF
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time (delay time)
t_d(on)
Rise time
t_r
Fall time
t_f
Turn-off time (delay time)
t_d(off)
Thermal resistance between channel and case R_th(ch-c)
Thermal resistance between channel and atmosphere R_th(ch-a)
V_DS = 720V, V_GS = 0
V_GS = ±30V, V_DS = 0
I_D = 1mA, V_GS = 0
V_DS = 25V, I_D = 1mA
V_GS = 10V, I_D = 3A
V_DS = 25V, I_D = 3A
I_DR = 5A, V_GS = 0
V_DS = 20V, V_GS = 0, f = 1MHz
V_DD = 200V, I_D = 3A
V_GS = 10V, R_L = 66.6Ω
9.9±0.3
φ3.2±0.1
unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7 123
1: Gate
2: Drain
3: Source
TO-220E Package
min
typ
max
Unit
100
µA
±1
µA
900
V
2
5
V
2
2.8
Ω
1.5
3.5
S
−1.6
V
1400
pF
140
pF
60
pF
30
ns
60
ns
60
ns
170
ns
2.5
°C/W
62.5 °C/W
1