2SK2339 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS

Power F-MOS FETs
2SK2339
2SK2339
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
8.5±0.2
6.0±0.5
Unit : mm
3.4±0.3
1.0±0.1
s Applications
q Non-contact relay
q Solenoid drive
q Motor drive
q Control equipment
q Switching mode regulator
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
1.1max.
0.5max.
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Symbol
Rating
Unit
Drain-Source breakdown voltage
VDSS
80±10
V
Gate-Source voltage
VGSS
±15
V
DC
Drain current
ID
±10
A
Pulse
IDP
±20
A
Avalanche energy capability
EAS ^*
62.5
mJ
Allowable power
dissipation
T_C= 25˚C
Ta= 25˚C
P_D
30
W
1.3
Channel temperature
Storage temperature
* L= 5mH, I_L= 5A, 1 pulse
T_ch
150
˚C
T_stg
–55 to +150
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Symbol
Condition
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
IDSS
IGSS
VDSS
Vth
RDS(on)1
RDS(on)2
| Yfs |
VDSF
trr
Qrr
Ciss
Coss
Crss
ton
tf
td(off)
Rth(ch-c)
Rth(ch-a)
VDS= 70V, VGS= 0
VDS= 0, VGS=15V
ID=1mA, VGS= 0
VDS=10V, ID=1mA
VGS=10V, ID= 5A
VGS= 4V, ID= 5A
VDS=10V, ID= 5A
IDR=10A, VGS= 0
L=230µ H, VDD= 30V, VGS= 0
IDR=10A, di/dt= 80A/µ s
V_DS=10V, V_GS= 0, f= 1MHz
VDD= 30V, ID= 5A
VGS=10V, RL= 6Ω
1 : Gate
2 : Collector
3 : Emitter
N Type Package
s Equivalent Circuit
D
G
S
Min
Typ
Max Unit
10
µA
±10
µA
70
90
V
1
2.5
V
150
230
mΩ
230
370
mΩ
3
5.5
S
–1.8
V
0.55
µs
2.2
µs
85
pF
250
pF
20
pF
0.5
µs
0.9
µs
1.9
µs
4.2
˚C/W
96
˚C/W