2SK2211 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
For switching
4.5±0.1
1.6±0.2
Unit : mm
1.5±0.1
s Features
• Low ON-resistance R_DS(ON)
• High-speed switching
• Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
s Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Ratings
Unit
Drain to Source voltage
V_DS
30
V
Gate to Source voltage
V_GSO
±20
V
Drain current
I_D
±1
A
Max drain current
I_PD
±2
A
Allowable power dissipation ^*
P_D
1
W
Channel temperature
P_ch
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) * PC board: Copper foil of the drain portion should have a area of
1 cm² or more and the board thickness should be 1.7 mm.
45˚
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
0.4±0.04
marking
1: Gate
2: Drain
3: Source
Mini-Power Type Package (3-pin)
Marking Symbol: 2M
Internal Connection
D
G
S
s Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain to Source cut-off current
I_DSS
V_DS = 25 V, V_GS = 0
10
µA
Gate to Source leakage current
I_GSS
V_GS = ±15 V, V_DS = 0
±10 µA
Drain to Source breakdown voltage V_DSS
I_D = 0.1 mA, V_GS = 0
30
V
Gate to Source voltage
V_GSS
I_GS = 0.1 mA, V_DS = 0
±20
V
Gate threshold voltage
V_th
V_DS = 5 V, I_D = 1 mA
0.8
2
V
Drain to Source ON-resistance ^*
R_DS(ON)1
V_GS = 4 V, I_D = 0.5 A
0.48 0.75
Ω
R_DS(ON)2
V_GS = 10 V, I_D = 0.5 A
0.35 0.6
Ω
Forward transfer admittance
Yfs
V_DS = 10 V, I_D = 0.5 A
0.5
S
Input capacitance (Common Source)
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
87
pF
Output capacitance (Common Source)
C_oss
69
pF
Reverse transfer capacitance (Common Source) C_rss
23
pF
Turn-on time
t_ON
V_GS = 10 V, I_D = 0.5 A, V_DD = 10 V
12
ns
Fall time
t_f
R_L = 10 Ω
160
ns
Turn-off time (delay time)
t_OFF
60
ns
Note) *: Pulse measurement
1