2SB1180 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type darlington

Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
■ Features
• High forward current transfer ratio h_FE
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SB1180 VCBO
−60
V
(Emitter open)
2SB1180A
−80
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
Collector-emitter voltage ^{2SB1180 V}CEO
−60
V
(Base open)
2SB1180A
−80
Emitter-base voltage (Collector open) V_EBO
−7
V
Collector current
I_C
−8
A
Peak collector current
I_CP
−12
A
Collector power dissipation
P_C
15
W
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB1180 VCEO IC = −30 mA, IB = 0
−60
V
(Base open)
2SB1180A
−80
Collector-base cutoff
current (Emitter open)
2SB1180 I_CBO
2SB1180A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
I_EBO
h_FE1 ^*
Collector-emitter saturation voltage
Base-emitter saturation voltage
h_FE2
V_CE(sat)
V_BE(sat)
Transition frequency
f_T
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
V_CB = −60 V, I_E = 0
V_CB = −80 V, I_E = 0
V_EB = −7 V, I_C = 0
V_CE = −3 V, I_C = −4 A
V_CE = −3 V, I_C = −8 A
I_C = −4 A, I_B = −8 mA
I_C = −4 A, I_B = −8 mA
V_CE = −3 V, I_C = −1 A, f = 1 MHz
I_C = −4 A, I_B1 = −8 mA, I_B2 = 8 mA
V_CC = −50 V
2 000
500
−100 µA
−100
−2
mA
10 000 
−1.5
V
−2
V
20
MHz
0.5
µs
2.0
µs
1.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE1
2 000 to 5 000 4 000 to 10 000
Publication date: March 2003
SJD00056AED
1