NLAS5223B_11 Datasheet, PDF (1/11 Pages) ON Semiconductor – Ultra-Low 0.35 Dual SPDT Analog Switch

NLAS5223B, NLAS5223BL
Ultra-Low 0.35 W
Dual SPDT Analog Switch
The NLAS5223B is an advanced CMOS analog switch fabricated in
Sub−micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring
Ultra−Low R_ON of 0.35 W, at V_CC = 4.3 V.
The part also features guaranteed Break Before Make (BBM)
switching, assuring the switches never short the driver.
Features
 Ultra−Low R_ON, 0.35 W (typ) at V_CC = 4.3 V
 NLAS5223B Interfaces with 2.8 V Chipset
 NLAS5223BL Interfaces with 1.8 V Chipset
 Single Supply Operation from 1.65−4.5 V
 Full 0−V_CC Signal Handling Capability
 High Off−Channel Isolation
 Low Standby Current, t50 nA
 Low Distortion
 R_ON Flatness of 0.15 W
 High Continuous Current Capability
 320 mA Through Each Switch
 Large Current Clamping Diodes at Analog Inputs
 320 mA Continuous Current Capability
 Package:
 1.4 x 1.8 x 0.75 mm WQFN10 Pb−Free
 1.4 x 1.8 x 0.55 mm UQFN10 Pb−Free
 These are Pb−Free Devices
Applications
 Cell Phone Audio Block
 Speaker and Earphone Switching
 Ring−Tone Chip/Amplifier Switching
 Modems
http://onsemi.com
MARKING
DIAGRAM
WQFN10
XXMG
CASE 488AQ
G
1
UQFN10
XXMG
CASE 488AT
G
1
XX
= Specific Device Code
AD = NLAS5223BMNR2G
AE = NLAS5223BLMNR2G
AP = NLAS5223BMUR2G
M
= Date Code/Assembly Location
G
= Pb−Free Device
(Note: Microdot may be in either location)
NC2
7
GND
6
IN2 8
5 NC1
COM2 9
NO2 10
4 IN1
3 COM1
1
2
V_CC
NO1
IN 1, 2
0
1
FUNCTION TABLE
NO 1, 2
OFF
ON
NC 1, 2
ON
OFF
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
 Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 8
Publication Order Number:
NLAS5223B/D