NLAS5223B Datasheet, PDF (1/12 Pages) ON Semiconductor – Ultra−Low 0.5 ohm Dual SPDT Analog Switch

NLAS5223B, NLAS5223BL
Ultra−Low 0.5 W
Dual SPDT Analog Switch
The NLAS5223B is an advanced CMOS analog switch fabricated in
Sub−micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring
Ultra−Low R_ON of 0.5 W, at V_CC = 3.0 V.
The part also features guaranteed Break Before Make (BBM)
switching, assuring the switches never short the driver.
Features
• Ultra−Low R_ON, t0.5 W at V_CC = 3.0 V
• NLAS5223B Interfaces with 2.8 V Chipset
• NLAS5223BL Interfaces with 1.8 V Chipset
• Single Supply Operation from 1.65−4.5 V
• Full 0−V_CC Signal Handling Capability
• High Off−Channel Isolation
• Low Standby Current, t50 nA
• Low Distortion
• R_ON Flatness of 0.15 W
• High Continuous Current Capability
$300 mA Through Each Switch
• Large Current Clamping Diodes at Analog Inputs
$300 mA Continuous Current Capability
• Package:
♦ 1.4 x 1.8 x 0.75 mm WQFN−10 Pb−Free
♦ 1.4 x 1.8 x 0.55 mm UQFN−10 Pb−Free
• These are Pb−Free Devices
Applications
• Cell Phone Audio Block
• Speaker and Earphone Switching
• Ring−Tone Chip / Amplifier Switching
• Modems
http://onsemi.com
MARKING
DIAGRAM
WQFN−10
XXMG
CASE 488AQ
G
1
UQFN−10
XXMG
CASE 488AT
G
1
XX
= Specific Device Code
AD = NLAS5223BMNR2G
AE = NLAS5223BLMNR2G
AP = NLAS5223BMUR2G
M
= Date Code/Assembly Location
G
= Pb−Free Device
(Note: Microdot may be in either location)
NC2
7
GND
6
IN2 8
5 NC1
COM2 9
NO2 10
4 IN1
3 COM1
1
2
V_CC
NO1
FUNCTION TABLE
IN 1, 2
NO 1, 2
NC 1, 2
0
OFF
ON
1
ON
OFF
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
September, 2006 − Rev. 3
Publication Order Number:
NLAS5223B/D