NLAS3899B Datasheet, PDF (1/10 Pages) ON Semiconductor – Dual DPDT Low RON, Low Capacitance Switch

NLAS3899B
Dual DPDT Low R_ON, Low
Capacitance Switch
The NLAS3899B is a dual DPDT analog switch designed for low
power audio and dual SIM card applications. The low R_ON of 3.0 W
(typical) is ideal for routing audio signals to or from a moderately high
impedance load. In addition, the low C_ON of 20 pF (typical) gives the
NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card
applications.
Features
• Single Supply Operation
1.65 to 4.3 V V_CC
Function Directly from Li−Ion Battery
• Low ON Resistance (3.0 W Typical Across V_CC)
• Low C_ON (20 pF Typical)
• Bandwidth 280 MHz
• Maximum Breakdown Voltage: 5.5 V
• Low Static Power
• Interfaces with 1.8 V Chipset
• These are Pb−Free Devices
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Dual SIM Card Data Switching
• Four Unbalanced (Single−Ended) Switches
Important Information
• ESD Protection:
Human Body Model (HBM) 1000 V − All Pins
Human Body Model (HBM) 5000 V − I/O to GND
• Continuous Current Rating Through each Switch ±300 mA
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Package:
♦ 1.8 x 2.6 x 0.75 mm WQFN16 Pb−Free
♦ 3.0 x 3.0 x 0.9 mm QFN16 Pb−Free
http://onsemi.com
MARKING
DIAGRAMS
16
1
ÇÇÇÇ_AAMG
G
1
WQFN16
CASE 488AP
16
1
ÇÇÇ _QFN16
ÇÇÇ _{CASE 485AE}
NLAS
1
3899
ALYW
XX = Specific Device Code
A = Assembly Location
M = Date Code/Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
COMA NOA Vcc NCD
16 15 14 13
NCA ¹
A−B IN ²
NOB 3
12 _COMD
11 _NOD
10 C−D IN
COMB ⁴
9 _NCC
5
6
7
8
NCB GND NOCCOMC
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 0
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
1
Publication Order Number:
NLAS3899B/D