NLAS3799B Datasheet, PDF (1/11 Pages) ON Semiconductor – Dual DPDT Ultra−Low RON Switch

NLAS3799B, NLAS3799BL
Dual DPDT Ultra−Low R_ON
Switch
The NLAS3799B is an ultra−low R_ON dual DPDT and a 0.5 W R_ON
analog switch. This device is designed for low operating voltage, high
current switching of speaker output and earpiece for cellphone
applications. It can switch a balanced stereo output. The NLAS3799B
can handle a balanced microphone/speaker/ring−tone generator in a
monophone mode. The device contains a break−before−make (BBM)
feature.
Features
• Single Supply Operation
1.65 to 4.5 V V_CC
Function Directly from LiON Battery
• Maximum Breakdown Voltage: 5.5 V
• Low Static Power
• NLAS3799B Interfaces with 2.8 V Chipset
NLAS3799BL Interfaces with 1.8 V Chipset
• These are Pb−Free Devices*
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Four Unbalanced (Single−Ended) Switches
• Stereo Balanced (Push−Pull) Switching
Important Information
• ESD Protection:
HBM (Human Body Model) > 8000 V
MM (Machine Model) > 400 V
• Continuous Current Rating Through each Switch ±300 mA
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Package: 1.8 x 2.6 x 0.75 mm WQFN−16 Pb−Free
http://onsemi.com
1
WQFN−16
CASE 488AP
MARKING
DIAGRAMS
ÇÇÇǹ⁶
1
XXM
G
XX = Specific Device Code
AK = NLAS3799B
AL = NLAS3799BL
M = Date Code/Aseembly Location
G = Pb−Free Package
COMA NOA Vcc NCD
16 15 14 13
NCA ¹
A−B IN 2
NOB 3
COMB 4
12 _COMD
11 NOD
10 C−D IN
9 NCC
5
6
7
8
NCB GND NOCCOMC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 0
Publication Order Number:
NLAS3799B/D