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NLAS3699B Datasheet, PDF (1/10 Pages) ON Semiconductor – Dual DPDT Ultra−Low RON Switch | |||
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NLAS3699B
Dual DPDT UltraâLow RON
Switch
The NLAS3699B is a dual independent ultraâlow RON DPDT
analog switch. This device is designed for low operating voltage, high
current switching of speaker output for cell phone applications. It can
switch a balanced stereo output. The NLAS3699B can handle a
balanced microphone/speaker/ringâtone generator in a monophone
mode. The device contains a breakâbeforeâmake feature.
Features
⢠Single Supply Operation
1.65 to 4.5 V VCC
Function Directly from LiON Battery
⢠Maximum Breakdown Voltage: 5.5 V
⢠Tiny 3 x 3 mm QFN PbâFree Package
Meet JEDEC MOâ220 Specifications
⢠Low Static Power
⢠This is a PbâFree Device*
Typical Applications
⢠Cell Phone Speaker/Microphone Switching
⢠RingtoneâChip/Amplifier Switching
⢠Four Unbalanced (SingleâEnded) Switches
⢠Stereo Balanced (PushâPull) Switching
Important Information
⢠ESD Protection:
HBM (Human Body Model) > 8000 V
MM (Machine Model) > 400 V
⢠Continuous Current Rating Through each Switch ±300 mA
⢠Conforms to: JEDEC MOâ220, Issue H, Variation VEEDâ6
⢠Pin for Pin Compatible with STG3699
http://onsemi.com
MARKING
DIAGRAMS
ÃÃÃÃ QFNâ16
CASE 485AE
16
1
NLAB
1
3699
ALYWG
G
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbâFree Package
(Note: Microdot may be in either location)
D1 1S1 Vcc 4S2
16 15 14 13
1S2 1
12 D4
1â2IN 2
2S1 3
11 4S1
10 3â4IN
D2 4
9 3S2
5
6
7
8
2S2 GND 3S1 D3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 â Rev. 0
Publication Order Number:
NLAS3699B/D
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