NLAS3699 Datasheet, PDF (1/10 Pages) ON Semiconductor – Dual DPDT Ultra-Low RON Switch

NLAS3699
Dual DPDT Ultra−Low R_ON
Switch
The NLAS3699 is a dual independent ultra−low R_ON DPDT analog
switch. This device is designed for low operating voltage, high current
switching of speaker output for cell phone applications. It can switch a
balanced stereo output. The NLAS3699 can handle a balanced
microphone/speaker/ring−tone generator in a monophone mode. The
device contains a break−make feature.
Features
• Single Supply Operation
1.65 to 4.7 V V_CC
Function Directly from LiON Battery
• Maximum Breakdown Voltage: 5.0 V
• Tiny 3 x 3 mm QFN Pb−Free Package
Meet JEDEC MO−220 Specifications
• Low Static Power
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Four Unbalanced (Single−Ended) Switches
• Stereo Balanced (Push−Pull) Switching
Important Information
• ESD Protection:
HBM (Human Body Model) > 4000 V
MM (Machine Model) > 400 V
• Continuous Current Rating Through each Switch ±300 mA
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Pin for Pin Compatible with STG3699
http://onsemi.com
MARKING
DIAGRAMS
ÇÇ _QFN−16
ÇÇ ^{CASE 485AE}
16
1
NLAS
1
3699
ALYW
G
XXXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
D1 1S1 Vcc 4S2
16 15 14 13
1S2 ¹
1−2IN 2
2S1 3
D2 4
12 _D4
11 4S1
10 3−4IN
9 3S2
5
6
7
8
2S2 GND 3S1 D3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 0
Publication Order Number:
NLAS3699/D