NJW21193G_13 Datasheet, PDF (1/7 Pages) ON Semiconductor – Silicon Power Transistors

NJW21193G (PNP)
NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Power Dissipation @ T_C = 25°C
Derate Above 25°C
V_CEO
V_CBO
V_EBO
V_CEX
I_C
I_CM
I_B
P_D
250
Vdc
400
Vdc
5.0
Vdc
400
Vdc
16
Adc
30
Adc
5.0
Adc
200
W
1.6
W/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
−  65 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Symbol
R_qJC
R_qJA
Max
0.625
40
Unit
°C/W
°C/W
http://onsemi.com
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING
4
DIAGRAM
TO−3P
CASE 340AB
STYLES 1,2,3
NJW2119xG
AYWW
1
2
3
x
G
A
Y
WW
12 3
= 3 or 4
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW21193G
NJW21194G
Package
TO−3P
(Pb−Free)
TO−3P
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 1
Publication Order Number:
NJW21193/D