NJW21193G Datasheet, PDF (1/7 Pages) ON Semiconductor – Silicon Power Transistors

NJW21193G (PNP)
NJW21194G (NPN)
Preferred Devices
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
•ăTotal Harmonic Distortion Characterized
•ăHigh DC Current Gain -
h_FE = 20 Min @ I_C = 8 Adc
•ăExcellent Gain Linearity
•ăHigh SOA: 2.25 A, 80 V, 1 Second
•ăThese are Pb-Free Devices
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage - 1.5 V
Collector Current - Continuous
Collector Current - Peak (Note 1)
V_CEO
V_CBO
V_EBO
V_CEX
I_C
250
Vdc
400
Vdc
5.0
Vdc
400
Vdc
16
Adc
30
Base Current - Continuous
I_B
5.0
Adc
Total Power Dissipation @ T_C = 25°C
P_D
200
W
Derate Above 25°C
1.6
W/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
-ā 65 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Case
R_qJC
0.625 °C/W
Thermal Resistance,
Junction-to-Ambient
R_qJA
40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
http://onsemi.com
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
MARKING
DIAGRAM
TO-3P
CASE 340AB
NJW2119xG
AYWW
x
= 3 or 4
G
= Pb-Free Package
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
NJW21193G
NJW21194G
Package
TO-3P
(Pb-Free)
TO-3P
(Pb-Free)
Shipping
30 Units/Rail
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
©Ă Semiconductor Components Industries, LLC, 2008
1
January, 2008 - Rev. 0
Publication Order Number:
NJW21193/D