NJVMJB41CT4G Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

MJB41C,
NJVMJB41CT4G (NPN),
MJB42C,
NJVMJB42CT4G (PNP)
Complementary Silicon
Plastic Power Transistors
D²PAK for Surface Mount
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically the Same as TIP41 and T1P42 Series
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{− Peak}
V_CEO
100
Vdc
V_CB
100
Vdc
V_EB
5.0
Vdc
I_C
6.0
Adc
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{@ T}C ^{= 25_C}
Derate above 25_C
I_B
2.0
Adc
P_D
65
W
0.52
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{@ TA = 25_C}
Derate above 25_C
P_D
2.0
W
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Unclamped Inductive Load Energy (Note 1)}
E
62.5
mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg −65 to +150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance,}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Junction−to−Ambient}
R_qJC
R_qJA
1.92
_C/W
62.5
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
50
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for Soldering}
T_L
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Purposes, 1/8″ from Case for 10 Seconds
260
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I_C = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V_CC = 10 V, R_BE = 100 W
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 4
http://onsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
100 VOLTS, 65 WATTS
MARKING
DIAGRAM
D²PAK
CASE 418B
STYLE 1
J4xCG
AYWW
J4xC
A
Y
WW
G
= Specific Device Code
x = 1 or 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
MJB41CG
MJB41CT4G
D²PAK
(Pb−Free)
D²PAK
(Pb−Free)
50 Units / Rail
800 / Tape &
Reel
NJVMJB41CT4G
MJB42CG
D²PAK
(Pb−Free)
D²PAK
(Pb−Free)
800 / Tape &
Reel
50 Units / Rail
MJB42CT4G
D²PAK
(Pb−Free)
800 / Tape &
Reel
NJVMJB42CT4G
D²PAK
(Pb−Free)
800 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJB41C/D