U309 Datasheet, PDF (3/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel JFETs

SPECIFICATIONS FOR U309 AND U31O (TA = 25 C UNLESS NOTED)
Parameter
Static
Symbol
Test Conditions
Typa
Limits
U309
U310
Min Max Min Max
Unit
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VcS(off)
bss
'GSS
IG
TDS(on)
VGS(F)
IG = -1 MA , VDS = 0 V
VDS = 10V, ID = 1 nA
VDS = iov, vos = o v
VGS = -15V,VDS = O V
TA=125°C
VDG = 9V, ID = 10mA
VGS = 0 V, D = 1 mA
IG = 1 0 m A , VDS = 0 V
-35
-25
-25
V
,4
-A
-2.5
-6
V
12
30
24
60
mA
-0.002
-0.15
-0.15
nA
-0.001
-0.15
0.15
uA
-15
PA
35
H
0.7
I
I
V
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
9f>
14
10
10
mS
VDS= 10 V, ID = 10mA
f = 1 kHz
9os
110
250
250
uS
Ciss
4
VDS = 10 v, VGS = -iov
f=1 MHz
Crss
1.9
en
VDS =10 V, ID = 10mA
f = 100 Hz
6
5
5
pF
2.5
2.5
nV/
VHz
High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
Common-Gate Power Gain0
Noise Figure
f= 105 MHz
14
9fg
f = 450 MHz
13
mS
f= 105 MHz
0.16
Sog
f = 450 MHz
0.55
Vn<= = 10 V
ID = 10mA
f = 105 MHz
16
14
14
GW
f = 450 MHz
11.5
10
10
dB
f = 105MHz
1.5
2
2
NF
f = 450 MHz
2.7
3.5
3.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW < 300 us duty cycle < 3%.
c. Gain (Gpg) measured at optimum input noise match.