NKEF550 Datasheet, PDF (1/1 Pages) Nell Semiconductor Co., Ltd – Fast Recovery Epitaxial Diode Module

SEMICONDUCTOR
NKEF550 Series _RRooHHSS
Fast Recovery Epitaxial Diode Module
Features
1. Short Recovery Time
2. Low Switching Losses
3. Soft Recovery Behaviour
4. Isolation Voltage 3600V
Ordering code
NKEF 550
xx
ns
(1)
(2)
(3)
(4)
(1) For Fast Diode modules
(2) Maximum average forward current , A
(3) Voltage code , V ( code x 100 = / VRRM )
(4) trr (600V=200ns , 1200V=500ns)
A
K
24(0.94) 23(0.91) 23(0.91)
14(0.55)
80(3.15)
94(3.70)
6.3(0.25)
DIA.
3 screws M6
All dimensions in millimeters ( inches )
Electrical Characteristics
Parameter
Condition
IF(AV) Average forward current
180 half sine wave
Single side cooled , Tc=75 C
IF(RMS) R.M.S. Forward current
Single side cooled , Tc= 75 C
VRRM
IFSM
I²t
Repetitive peak reverse voltage
Peak one-cycle surge
( non-repetitive forward current )
Max. Permissible surge energy
tp=10 ms VRMS = VRRM x 1.1
10 ms duration
VR = 0.6 VRRM
VF
@ Tc=25 C
VISOL
VTO
rt
trr
For power-loss calculations only
lISOL ≤ 1mA t=1s
Forward conduction slope resistance
Max. Value Unit
550
A
805
A
600 to 1200 V
4800
A
115200
1.08
3600
0.52
1.06
200~500
A² S
V
V
V
mΩ
ns
Tstg
Storage temperature range
Rth(J-C) Thermal resistance
Wt
Approximate weight
Busbar to module ( M 6 )
T
Module to heatsink ( M 6 )
-40 to 150
C
Single side cooled
0.071
K/ W
150
g
A mounting compound is recommened.
Torque should be rechecked after a
period of 3 hours.
2.3~2.8 ^Nm
4.5~5.5 ^Nm