2SK2597 Datasheet, PDF (1/6 Pages) NEC – N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION

PRELIMINARY DATA SHEET
SILICON POWER MOS FIELD EFFECT TRANSISTOR
2SK2597
N-CHANNEL SILICON POWER MOSFET
FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE
POWER AMPLIFICATION
FEATURES
• High output, high gain
PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)
PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)
• Low intermodulation distortion
• Covers all base station frequencies such as 800-MHz PDC
and GSM
• High-reliability gold electrodes
• Hermetic sealed package
• Internal matching circuit
• Push-pull structure
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PACKAGE DRAWING (Unit: mm)
45˚
G1
45˚
G2
S
φ 3.3±0.3
D1
D2
1.4
3.2±0.2 ±0.3 3.2±0.2
13.5±0.3
28.0±0.3
Parameter
Drain-source voltage
Gate-source voltage
Drain current (D.C.)
Total power dissipation
Thermal resistance
Channel temperature
Storage temperature
Note Per side
Symbol
VDS
VGS
ID
PT
Rth
Tch
Tstg
Ratings
60
7
15^Note
290
0.6
200
–65 to +150
Unit
V
V
A
W
˚C/W
˚C
˚C
21.5±0.3
G1, G2: gate
D1, D2: drain
S : source
Flange is connected to the source.
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Parameter
Symbol
Condition
MIN. TYP. MAX. Unit
Gate leakage current
IGSS
VGS = 7 V
1
µA
Cut-off voltage
VGS(off)
VDS = 5 V, ID = 50 mA
1.5
4
V
Drain current
IDSS
VDS = 60 V
2
mA
Mutual conductance
gm
VDS = 5 V, ID = 3 A, ∆ID = 100 mA
2.0
S
Output power
Drain efficiency
PO
f = 960 MHz, VDD = 30 V
80
90
W
ηD
IDQ = 200 mA × 2, Pin = 40 dBm
35
40
%
Linear gain
GL
f = 960 MHz, VDD = 30 V
11
12
dB
IDQ = 200 mA × 2, Pin = 30 dBm
Third intermodulation distortion
IM3
f = 900 MHz, ∆f = 0.1 MHz, VDD = 30 V
–38
dBc
IDQ = 200 mA × 2, PO = 42 dBm
The information in this document is subject to change without notice.
Document No. P10252EJ1V0DS00 (1st edition)
Date Published October 1995 P
Printed in Japan
©
1995