2SK2514 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2514
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2514 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super Low On-Resistance
RDS (on)1 ≤ 15 mΩ (VGS = 10 V, ID = 25 A)
RDS (on)2 ≤ 23 mΩ (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4
4.7 MAX.
1.5
123
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID (DC)
±50
A
Drain Current (pulse)*
ID (pulse) ±200
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
150
W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
2.2±0.2
5.45
Gate
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Body
Diode
Gate Protection
Diode
Source
Document No. D10296EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995