2SK2499 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2499, 2SK2499-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2499 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 9 mΩ (VGS = 10 V, ID = 25 A)
RDS(on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3 400 pF TYP.
• High Avalanche Capability.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±50
A
Drain Current (pulse)*
ID(pulse) ±200
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75
W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
50
A
Single Avalanche Energy**
EAS
250 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54 _{1. Gate}
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX.
1.3 ± 0.2
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
123
(0.5(0R.)8R)
0.5 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Gate Protection Diode
Source
Document No. D10045EJ1V0DS00 (1st edition)
Date Published May 1995 P
Printed in Japan
©
1995