2SK2415 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415, 2SK2415-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2415 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)
• Low Ciss Ciss = 570 pF TYP.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±8.0
A
Drain Current (pulse)*
ID(pulse)
±32
A
Total Power Dissipation (Tc = 25 ˚C) PT1
20
W
Total Power Dissipation (Ta = 25 ˚C) PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Single Avalanche Current**
IAS
8.0
A
Single Avalanche Energy**
EAS
6.4
mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
6.5 ± 0.2
5.0 ± 0.2
4
2.3 ± 0.2
0.5 ± 0.1
1 23
1.3 MAX.
0.6 ± 0.1
2.3 2.3
0.6 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-251 (MP-3)
6.5 ± 0.2
5.0 ± 0.2
4
2.3 ± 0.2
0.5 ± 0.1
12 3
1.3 MAX.
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252 (MP-3Z)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13207EJ1V1DS00 (1st edition)
(Previous No. TC-2496)
Date Published December 1997 N CP(K)
Printed in Japan
©
1994