2SK2409 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2409
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2409 is N-Channel MOS Field Effect Transistor de-
signed for solenoid, motor, and lamp driver.
FEATURES
• Low On-Resistance
RDS(on) ≤ 27 mΩ (VGS = 10 V, ID = 20 A)
RDS(on) ≤ 40 mΩ (VGS = 4 V, ID = 20 A)
• Low Ciss Ciss = 2040 pF TYP.
• Built-in Gate Protection Diode
PACKAGE DIMENSION
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
QUALITY GRADE
Standard
Please refer to “Quality grade on NEC Semiconductor Device”
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±40
A
Drain Current (pulse)
ID(pulse)*
±160
A
Total Power Dissipation (Ta = 25 ˚C) PT1
2.0
W
Total Power Dissipation (Tc = 25 ˚C) PT2
35
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150 ˚C
Single Avalanche Current
IAS**
40
A
Single Avalanche Energy
EAS**
160 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
123
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. TC-2489
(O. D. No. TC-8028)
Date Published September 1994 P
Printed in Japan
©
1994